30v p-channel enhancement-mode mosfet v ds = -30v r ds(on) , v gs @-10v, i ds @-4.2a = 70m ? r ds(on) , v gs @-4.5v, i ds @-4.0a = 85 m ? r ds(on) , v gs @-2.5v, i ds @-1.0a = 130m ? advanced trench process technology high density cell design for ultra low on-resistance (t a = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -30 v gate-source voltage v gs 12 continuous drain current i d -4.2 a pulsed drain current 1) i dm -30 operating junction and storage temperature range t j , t stg -55 to 150 o c note: 1. repetitive rating: pulse width limited by the maximum junction temperature sot? 23 (t o?236ab) s-lp2305lt1g d s leshan radio comp any, ltd. g features maximum ratings and thermal characteristics p d 1.4 w total power dissipation junction-to-ambient thermal resistance (pcb mounted) 2) r ja 140 o c/w 2. 1-in 2oz cu pcb board 3000/tape&reel 10000/tape&reel lp2305lt3g p05 ordering information marking shipping device 3 1 2 rev .o 1/4 1 2 3 lp2305lt1g s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. lp2305lt1g p05 s-lp2305lt1g s-lp2305lt3g
leshan radio comp any, ltd. parameter symbol test condition min typ max unit static 2) drain-source breakdown voltage bv dss v gs = 0v, i d -30 = -250ua v drain-source on-state resistance r ds(on) v gs d 53.0 = -10v, i = -4.2a 70.0 m drain-source on-state resistance r ds(on) v gs d 64.0 = -4.5v, i = -4a 85.0 drain-source on-state resistance r ds(on) v gs d 86.0 = -2.5v, i =-1a 130.0 gate threshold voltage v gs(th) v ds =v gs , i d -0.7 = -250ua -1.3 v zero gate voltage drain current i dss v ds -1 = -24v, v gs = 0v ua gate body leakage i gss v gs 100 = 12v, v ds = 0v na forward transconductance g fs v ds = -5v, i d 7 = -5a 1 1 s source-drain diode max. diode forward current i s -2.2 a diode forward voltage v sd i s -1 = -1.0a, v gs = 0v v note : 1 . pulse test: pulse width <= 300us, duty cycle<= 2% 2. static parameters are based on package level with recommended wire-bonding electrical characteristics dynamic 3) total gate charge q g v ds = -15v, i d = -4a v gs = -4.5v 6.36 nc gate-source charge q gs 1.79 gate-drain charge q gd 1.42 turn-on delay time t d(on) v dd = -15v, rl= 3.6 ? i d = -1a, v gen = -10v r g = 6 11.36 ns turn-on rise time t r 2.32 turn-off delay time t d(off) 34.88 turn-off fall time t f 3.52 input capacitance c iss v ds = -15v, v gs = 0v f = 1.0 mhz 826.18 pf output capacitance c oss 90.74 reverse transfer capacitance c rss 53.18 3. guaranteed by design; not subject to production testing rev .o 2/4
leshan radio comp any, ltd. typical electrical characteristics rev .o 3/4 lp2305lt1g , s-lp2305lt1g
leshan radio comp any, ltd. no tes: 1 . dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 s ot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 rev .o 4/4 lp2305lt1g , s-lp2305lt1g
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